MRF6P24190HR6_08 Datasheet, PDF (8/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
Date
Dec. 2006
Mar. 2007
Apr. 2008
Description
• Initial Release of Data Sheet
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a
200°C+ hot wire operating condition, p. 1
• Corrected V_DS to V_DD in the RF test condition voltage callout for V_GS(Q), On Characteristics table, p. 2
• Added frequency to title of schematic, component part layout and typical characteristic curves, p. 3 - 5
• Added Fig. 6, MTTF versus Junction Temperature graph, p. 5
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
MRF6P24190HR6
8
RF Device Data
Freescale Semiconductor