MRF6P21190HR6 Datasheet, PDF (8/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET

Z_o = 25 Ω
f = 2200 MHz
f = 2200 MHz
Z_load
Z_source
f = 2000 MHz
f = 2000 MHz
MRF6P21190HR6
8
V_DD = 28 Vdc, I_DQ = 1900 mA, P_out = 44 W Avg.
f
MHz
Z_source
Ω
Z_load
Ω
2000
2110
5.63 - j12.88
4.36 - j10.02
3.43 - j10.06
3.22 - j7.13
2140
4.56 - j8.49
3.39 - j6.07
2170
5.11 - j7.41
3.76 - j5.45
2200
5.42 - j6.67
3.69 - j5.16
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
−
Z _source
−
+
Z _load
Output
Matching
Network
Figure 15. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor