MC13850 Datasheet, PDF (8/54 Pages) Freescale Semiconductor, Inc – Low Noise Amplifier with Bypass Switch

Scattering and Noise Parameters
Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued)
(Vcc = 2.7V, TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Noise Figure
NF
Low IP3
High IP3
—
1.6
1.95
dB
—
1.85
2.2
Bypass
—
3.2
4.3
Input IP3
IIP3
dBm
Low IP3
7
10
—
High IP3
11
12.5
—
Bypass
26
27.2
—
Power Output at 1.0 dB Gain Compression
P1dBoutput
dBm
Low IP3
-1
1
—
High IP3
0
2.2
—
Gain
S21
dB
Low IP3
11.6
12.6
—
High IP3
12
13
—
Bypass
-3.7
-3.2
—
3 Scattering and Noise Parameters
Table 5 through Table 14 list the S parameters for the packaged part in a 50 Ω system for each of the four
modes of operation and over temperature.
Table 5. Low IP3 Mode 25 °C Scattering Parameters
(Vcc = 2.7V, Enable 1 = High, Enable 2 = High, 50 Ω System)
f (MHz)
300
350
400
450
500
550
600
650
700
S11
Mag
0.767
0.754
0.742
0.727
0.693
0.675
0.664
0.647
0.628
Ang
-16.4
-18.8
-21.3
-23.5
-25.9
-27.8
-30.2
-32.5
-35
S21
Mag
12.078
11.759
11.482
11.209
10.786
10.489
10.187
9.98
9.815
Ang
163.6
160.1
156.9
154.1
150.2
147.3
144.6
142.1
139.9
S12
Mag
Ang
0.02
68.8
0.024
69
0.027
69.6
0.03
69.7
0.032
68.8
0.035
69.1
0.038
68.7
0.04
68.3
0.043
68.1
S22
Mag
0.854
0.848
0.84
0.833
0.824
0.81
0.802
0.79
0.776
Ang
1.1
-2.6
-5.6
-8.5
-8.9
-11.1
-13.1
-15.3
-17.2
MC13850 Advance Information, Rev. 1
8
Freescale Semiconductor