MRF8S9220HR3 Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 65 W Avg.
f
MHz
Z_source
W
Z_load
W
820
1.27 - j1.44
2.14 - j2.23
840
1.27 - j1.15
1.97 - j1.94
860
1.23 - j0.90
1.82 - j1.65
880
1.05 - j0.68
1.54 - j1.40
900
0.95 - j0.39
1.29 - j1.11
920
0.94 - j0.15
1.26 - j0.85
940
0.90 + j0.08
1.22 - j0.69
960
0.85 + j0.31
1.11 - j0.47
980
0.78 + j0.55
1.01 - j0.23
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 9. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
7