MRF6VP21KHR6_10 Datasheet, PDF (7/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

Z_o = 5 Ω
f = 225 MHz
Z_source
f = 225 MHz
Z_load
V_DD = 50 Vdc, I_DQ = 150 mA, P_out = 1000 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
225
1.16 + j4.06
2.86 + j1.10
Z_source = Test circuit impedance as measured from
gate to gate, balanced configuration.
Z_load = Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
Device
+ Under
Test
--
Z _source
--
+
Z _load
Output
Matching
Network
Figure 14. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6VP21KHR6
7