MRF6V4300NBR5 Datasheet, PDF(7/15 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF6V4300NBR5 Datasheet, PDF (7/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

◁

f = 450 MHz

Zsource

Zo = 2 â¦

f = 450 MHz

Zload

VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW

MHz

Zsource

â¦

Zload

â¦

450

0.39 + j1.26

1.27 + j0.96

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 14. Series Equivalent Source and Load Impedance

RF Device Data

Freescale Semiconductor

MRF6V4300NR1 MRF6V4300NBR1

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