MRF6V2010NR1 Datasheet, PDF (7/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

Z_o = 50 Ω
Z_{source f = 220 MHz}
Z_load
f = 220 MHz
V_DD = 50 Vdc, I_DQ = 30 mA, P_out = 10 W CW
f
MHz
Z_source
W
Z_load
W
220
20 + j25
75 + j44
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 13. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
7