MRF21180R6_06 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
12.5
12.25
I_DQ = 2100 mA
1900 mA
12
11.75
11.5
1700 mA
1500 mA
1300 mA
11.25
11
10
V_DD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
100
220
P_out, OUTPUT POWER (WATTS) PEP
Figure 9. Two-Tone Power Gain versus
Output Power
35
−8
η
30
−13
IRL
25 _{VDD = 28 Vdc}
−18
P_out = 170 W (PEP)
20
I_DQ (I_CQ) = 1700 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
−23
15
−28
IMD
10 ^Gps
−33
2090
2110
2130
2150
2170
2190
f, FREQUENCY (MHz)
Figure 10. Two-Tone Broadband Performance
−25
−30 3rd Order
−35 ^VDD ^{= 28 Vdc}
P_out = 170 W (PEP)
−40
I_DQ = 1700 mA
f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2
−45 ^{5th Order}
−50 ^{7th Order}
−55
0.1
1
10 20
Df, TONE SEPARATION (MHz)
Figure 11. Intermodulation Distortion
Products versus Two - Tone Spacing
RF Device Data
Freescale Semiconductor
+20
3.84 MHz
+30
Channel BW
0
−10
−20
−30
−40
−50
−ACPR in +ACPR in
−60 −IM3 in
3.84 MHz BW 3.84 MHz BW
−70 ^{3.84 MHz BW}
−80
−25 −20 −15 −10 −5 0 5 10
+IM3 in
3.84 MHz BW
15 20 25
f, FREQUENCY (MHz)
Figure 12. 2-Carrier W-CDMA Spectrum
MRF21180R6
7