MRF21085LR3 Datasheet, PDF (7/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
14.5
I_DQ = 1300 mA
1150 mA
14
1000 mA
850 mA
13.5
700 mA
13
12.5
4
10
V_DD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 9. Two-Tone Power Gain versus
Output Power
40
− 10
IRL
35 _η
− 15
30 ^{VDD = 28 Vdc}
− 20
P_out = 90 W (PEP)
I_DQ = 1000 mA
25 _{10 MHz Tone Spacing}
− 25
20 ^IMD
− 30
15 G_ps
− 35
10
− 40
2095 2110 2125 2140 2155 2170 2185
f, FREQUENCY (MHz)
Figure 10. Two-Tone Broadband Performance
− 20
V_DD = 28 Vdc
−25 ^IDQ ^{= 1000 mA}
f = 2140 MHz
−30 _{3rd Order}
− 35
− 40
5th Order
− 45
7th Order
− 50
− 55
0.1
1
10
30
Df, TONE SPACING (kHz)
Figure 11. Intermodulation Distortion Products
versus Two - Tone Spacing
+20
3.84 MHz
+30
Channel BW
0
− 10
− 20
− 30
− 40
− 50
−ACPR in +ACPR in
−60 −IM3 in
3.84 MHz BW 3.84 MHz BW +IM3 in
−70 ^{3.84 MHz BW}
3.84 MHz BW
− 80
−25 −20 −15 −10 −5 0 5 10 15 20 25
f, FREQUENCY (MHz)
Figure 12. 2-Carrier W-CDMA Spectrum
RF Device Data
Freescale Semiconductor
MRF21085LR3 MRF21085LSR3
7