MC33810 Datasheet, PDF (7/34 Pages) Freescale Semiconductor, Inc – Automotive Engine Control IC

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 3.0V ≤ VDD ≤ 5.5V, 9.0V ≤ VPWR ≤ 18V, -40°C ≤ TC ≤ 125°C, and calibrated timers,
unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13V, TA = 25°C.
Characteristic
Symbol
Min
Typ
Max
Unit
INJECTOR DRIVER OUTPUTS (OUT 0:3) (Continued)
Output Clamp Voltage 1
I_D = 20mA
V_OC1
V
48
53
58
Output Leakage Current
I_{OUT (LKG)}
VDD = 5.0V, V_DRAIN = 24V, Open Load Detection Current Disabled
–
VDD = 5.0V, V_DRAIN = V_OC - 1.0V, Open Load Detection Current Disabled
–
VDD = 0V, V_DRAIN = 24V, Sleep State
–
Over-temperature Shutdown⁽¹⁰⁾
Over-temperature Shutdown Hysteresis⁽¹⁰⁾
T_LIM
155
T_{LIM (HYS)}
5.0
IGNITION (IGBT) GATE DRIVER PARAMETERS (GD 0:3 FB0:3)
µA
–
20
–
3000
–
10
–
185
°C
10
15
°C
Gate Drive Output Voltage
I_GD = 500µA
I_GD = -500µA
V _{GS (ON)}
V _{GS (OFF)}
5
7.0
9.0
V
0
0.375
0.5
Sleep Mode Gate to Source Resistor
Sleep Mode FBx pin Leakage Current
VDD = 0V, V_FBx = 24V,
R _{GS (PULLDOW}
100
200
300
KΩ
N)
I_{FBX (LKG)}
–
µA
–
1.0
Feedback Sense Current (FBx Input Current)
FBx = 18V, Outputs Programmed OFF
I_FBX(FLT-SNS)
µA
1.0
Gate Drive Source Current (1 ≤ V_GD ≤ 3)
Gate Drive Turn Off Resistance
I _GATEDRIVE
685
R_DS(ON)
500
780
875
µA
Ω
–
1000
SOFT SHUTDOWN FUNCTION (VOLTAGES REFERENCED TO IGBT COLLECTOR)
Low Voltage Flyback Clamp
Driver Command Off, Soft Shutdown Enabled, GDx = 2.0V
V_LVC
VPWR VPWR VPWR + 13 V
+9.0
+11
Spark Duration Comparator Threshold (referenced to IC Ground Tab)
Rising Edge Relative to VPWR
Spark Duration Comparator Threshold (referenced to IC Ground Tab)⁽¹¹⁾
Falling Edge Relative to VPWR, Default = 5.5V Assuming ideal external 10:1
voltage divider. Voltage measured at high end of divider, not at pin. Tolerance
of divider not included
V_TH-RISE
V_TH-FALL
V
18
21
24
2.0
2.75
3.5
V
4.9
5.5
6.1
7.4
8.2
9.1
9.9
11.00
12.1
Open Secondary Comparator Threshold (referenced from primary to
Rising Edge Relative to GND. No hysteresis with 10:1 voltage divider.
V_TH-RISE
V
11.5
–
15.5
CURRENT SENSE COMPARATOR (RSP, RSN)
NOMI Trip Threshold Accuracy - Steady State Condition
3.0A across 0.02Ω (RSP - RSN = 60mV)
10.75A across 0.04Ω (RSP - RSN = 430mV)
NOMI_TRIPTA
%
–
4.0
-4.0
Notes
10. This parameter is guaranteed by design, however is not production tested.
11. Assuming Ideal external 10:1 Voltage Divider. Tolerance of 10:1 Voltage Divider is not included. Voltage is measured on the High End of
Divider - not at the pin. 10:1 N.3.A 10:1 Voltage Divider is produced using two resistors with a 9:1 resistance ratio by the basic formula:
V-----O-----U-----T-- _{= --------}R_-----1_---------
VIN R1 + R2
Where R2 = 9XR1
Analog Integrated Circuit Device Data
Freescale Semiconductor
33810
7