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| FAN73832 Datasheet, PDF (7/16 Pages) Freescale Semiconductor, Inc – Half-Bridge Gate-Drive IC | |||
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Dynamic Electrical Characteristics
VBIAS (VDD, VBS)=15.0V, VS=GND, CL=1000pF, RDT=20KΩ and TA = 25°C, unless otherwise specified.
Symbol
tON
tOFF
tR
tF
tSD(5)
DT1, DT2
Parameter
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Shutdown propagation delay
Dead-time LO OFF to HO ON & HO
OFF to LO ON
DMT Dead-time matching
Conditions
VS=0V, RDT=20KΩ
VS=0V, RDT=20KΩ
CL=1000pF
CL=1000pF
RDT =20KΩ
RDT = 200KΩ
RDT = 20KΩ
RDT =200KΩ
Min.
300
1.20
Typ.
580
180
50
30
100
400
1.68
0
0
Max.
730
230
100
80
180
500
2.30
60
150
Unit
nsec
Note:
5. This parameter, although guaranteed, is not 100% tested in production.
© 2006 Fairchild Semiconductor Corporation
FAN73832 Rev. 1.0.0
7
www.fairchildsemi.com
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