MRF7S38040HR3 Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
15.5
16
15
η_D
14
14.5 ^Gps
12
14 ^VDD ^{= 30 Vdc, P}out ^{= 8 W (Avg.)}
10
I_DQ = 450 mA, 802.16d, 64 QAM ³/_4, 4 Bursts
13.5 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
− 47
− 12
@ 0.01% Probability on CCDF
13
− 49
− 16
ACPR − U
12.5
ACPR −L
− 51
− 20
12
− 53
− 24
IRL
11.5
− 55
− 28
3400 3425 3450 3475 3500 3525 3550 3575 3600
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ P_out = 8 Watts Avg.
15
22
14.5
η_D
G_ps
14
V_DD = 30 Vdc, P_out = 14 W (Avg.)
13.5 _{IDQ = 450 mA, 802.16d, 64 QAM} 3_{/4, 4 Bursts}
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB
13 _{@ 0.01% Probability on CCDF}
20
18
16
− 38
− 12
12.5
ACPR − U
12 _{ACPR −L}
− 40
− 16
− 42
− 20
11.5
− 44
− 24
IRL
11
− 46
− 28
3400 3425 3450 3475 3500 3525 3550 3575 3600
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ P_out = 14 Watts Avg.
16
I_DQ = 675 mA
15
562.5 mA
14
450 mA
13 _{337.5 mA}
12
225 mA
11
V_DD = 30 Vdc, I_DQ = 450 mA
10
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
9
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 30 Vdc, I_DQ = 450 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
− 20
I_DQ = 225 mA
− 30
337.5 mA
675 mA
− 40
450 mA
562.5 mA
− 50
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S38040HR3 MRF7S38040HSR3
6
RF Device Data
Freescale Semiconductor