MRF6V2150NBR1 Datasheet, PDF (6/18 Pages) Freescale Semiconductor, Inc – RF Power Field-Effect Transistors

TYPICAL CHARACTERISTICS
26
55
24
22
50 V
45 V
20
40 V
35 V
18
30 V
16
25 V
V_DD = 20 V
14
0
50
100
I_DQ = 450 mA
f = 220 MHz
150
200
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
50
T_C = −30_C
85_C
25_C
45
40
V_DD = 50 Vdc
I_DQ = 450 mA
f = 220 MHz
35
10
15
20
25
30
35
P_in, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
28
80
25_C
27
26
G_ps
T_C = −30_C
25
85_C
70
−30_C ₆₀
50
25_C
24
40
85_C
23
30
η_D
22
21
5
10
V_DD = 50 Vdc
I_DQ = 450 mA
f = 220 MHz
100
20
10
200
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
10⁸
10⁷
10⁶
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 50 Vdc, P_out = 150 W CW, and η_D = 68.3%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6V2150NR1 MRF6V2150NBR1
6
RF Device Data
Freescale Semiconductor