MRF6V12500H Datasheet, PDF (6/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
700
T_C = --30_C
600
500
25_C
85_C
55_C
400
300
200
100
V_DD = 50 Vdc, I_DQ = 200 mA, f = 1030 MHz
Pulse Width = 128 μsec, Duty Cycle = 10%
0
0
2
4
6
8
10
12
P_in, INPUT POWER (dBm) PEAK
Figure 9. Output Power versus Input Power
22
80
G_ps
21
70
T_C = --30_C
20
60
19 ^25_C
50
18
55_C
40
85_C
17
30
16
η_D
15
14
30
20
V_DD = 50 Vdc, I_DQ = 200 mA, f = 1030 MHz 10
Pulse Width = 128 μsec, Duty Cycle = 10%
0
100
1000
P_out, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency versus
Output Power
10⁹
V_DD = 50 Vdc
P_out = 500 W Peak
10⁸
Pulse Width = 128 μsec
Duty Cycle = 10%
η_D = 62%
10⁷
10⁶
10⁵
90
110 130
150 170
190 210
230 250
T_J, JUNCTION TEMPERATURE (°C)
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
V_DD = 50 Vdc, I_DQ = 200 mA, P_out = 500 W Peak
f
MHz
Z_source
Ω
Z_load
Ω
1030
1.36 -- j1.27
2.50 -- j0.17
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z_source
Z_load
Figure 12. Series Equivalent Source and Load Impedance
MRF6V12500HR3 MRF6V12500HSR3
6
RF Device Data
Freescale Semiconductor, Inc.