MRF6S24140HR3 Datasheet, PDF (6/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Z_source
f = 2450 MHz
Z_o = 10 Ω
Z_load
f = 2450 MHz
V_DD = 28 Vdc, I_DQ = 1200 mA, P_out = 140 W CW
f
MHz
Z_source
W
Z_load
W
2450
4.55 + j4.9
1.64 - j6.57
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 7. Series Equivalent Source and Load Impedance
MRF6S24140HR3 MRF6S24140HSR3
6
RF Device Data
Freescale Semiconductor