MRF6S19060NR1 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
− 10
V_DD = 28 Vdc, P_out = 60 W (PEP), I_DQ = 610 mA
Two−Tone Measurements
−20 (f1 + f2)/2 = Center Frequency of 1960 MHz
− 30
3rd Order
− 40
5th Order
−50 _{7th Order}
− 60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
53
P3dB = 49.503 dBm (89.19 W)
51
49 ^{P1dB = 48.792 dBm (75.72 W)}
47
Ideal
Actual
45
43
V_DD = 28 Vdc, I_DQ = 610 mA
41
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
39
23
25
27
29
31
33
35
37
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
60
V_DD = 28 Vdc, I_DQ = 610 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
50 _{2−Carrier N−CDMA, 2.5 MHz Carrier}
Spacing, 1.2288 MHz Channel Bandwidth
40 PAR = 9.8 dB @ 0.01% Probability (CCDF)
30
IM3
− 10
−30_C ^25_C
25_C
85_C ^−20
− 30_C
85_C ^25_C −30
η_D
− 30_C
− 40
ACPR
20
T_C = −30_C
− 50
10
0
1
G_ps
85_C _{25_C}
10
− 60
− 70
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
19
70
18
T_C = −30_C
17
− 30_C
60
50
25_C
16
η_D
40
85_C
15
G_ps
30
85_C
14
20
13
12
1
V_DD = 28 Vdc
I_DQ = 610 mA
10
f = 1960 MHz
0
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6S19060NR1 MRF6S19060NBR1
6
17
I_DQ = 610 mA
f = 1960 MHz
16
15
14
13
16 V 20 V
24 V
V_DD = 12 V
12
0
20
40
60
28 V
32 V
80
100
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor