MRF6P27160HR6 Datasheet, PDF (6/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
−10
V_DD = 28 Vdc, P_out = 160 W (PEP), I_DQ = 1800 mA
Two−Tone Measurements, Center Frequency = 2645 MHz
−20
−30 3rd Order
−40 ^{5th Order}
−50
7th Order
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
58
Ideal
57
P3dB = 54.32 dBm (270.33 W)
56
55
P1dB = 53.64 dBm (231.15 W)
54
53
Actual
52
V_DD = 28 Vdc, I_DQ = 1800 mA
51
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 2645 MHz
50
34 35 36 37 38 39 40 41 42
P_in, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
35
−35
V_DD = 28 Vdc, I_DQ = 1800 mA, f = 2645 MHz
30 ^{Single−Carrier N−CDMA, 1.2288 MHz Channel}
−40
Bandwidth, Peak/Avg. = 9.8 dB @ 0.01%
25 ^{Probability (CCDF)}
−45
20
−50
G_ps
15
−55
10
5 _ηD
ALT1
ACPR
0
1
10
P_out, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. Single - Carrier N - CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
−60
−65
−70
100
20
50
G_ps
15
40
10
30
5
20
0
η_D
−5
0.1
1
V_DD = 28 Vdc
I_DQ = 1800 mA
10
f = 2645 MHz
0
10
100
400
P_out, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRF6P27160HR6
6
16
15
14
13
32 V
12
28 V
20 V
24 V
11
I_DQ = 1800 mA
V_DD = 16 V
f = 2645 MHz
10
0
60
120
180
240
300
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
RF Device Data
Freescale Semiconductor