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MRF1511N Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor
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TYPICAL CHARACTERISTICS, 66 - 88 MHz
18
70
16
66 MHz
60
77 MHz
50
14
88 MHz
40
88 MHz
66 MHz
77 MHz
12
10
8
12
VDD = 7.5 V
34 56 78
Pout, OUTPUT POWER (WATTS)
9 10
Figure 13. Gain versus Output Power
30
20
10
VDD = 7.5 V
0
12
3 45678
Pout, OUTPUT POWER (WATTS)
9 10
Figure 14. Drain Efficiency versus
Output Power
12
11
10
77 MHz
9
88 MHz
8
66 MHz
7
6
5
VDD = 7.5 V
Pin = 25.7 dBm
4
0
200
400
600
800
1000
IDQ, BIASING CURRENT (mA)
Figure 15. Output Power versus
Biasing Current
14
12
10
77 MHz
8
66 MHz
88 MHz
6
4
IDQ = 150 mA
Pin = 25.7 dBm
2
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 17. Output Power versus
Supply Voltage
80
70
60
88 MHz
77 MHz
50
66 MHz
VDD = 7.5 V
Pin = 25.7 dBm
40
0
200
400
600
800
1000
IDQ, BIASING CURRENT (mA)
Figure 16. Drain Efficiency versus
Biasing Current
80
70
60
88 MHz
50
77 MHz
66 MHz
40
IDQ = 150 mA
Pin = 25.7 dBm
30
5
6
7
8
9
10
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus
Supply Voltage
MRF1511NT1
6
RF Device Data
Freescale Semiconductor
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