MCM63D736 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM

Freescale Semiconductor, Inc.
PACKAGE THERMAL CHARACTERISTICS (See Note 1)
Rating
Symbol
TQFP
Unit Notes
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
R_θJA
35
°C/W
2
30
Junction to Board (Bottom)
R_θJB
23
°C/W
3
Junction to Case (Top)
R_θJC
9
°C/W
4
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ±5%, TA = 0° to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND SUPPLY CURRENTS
Parameter
Symbol
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (E = VIH, Vout = 0 to VDD)
AC Supply Current (Iout = 0 mA) (VDD = Max, f = fmax)
CMOS Standby Supply Current (Deselected, Clock (K)
Cycle Time ≥ tKHKH, All Inputs Toggling at CMOS Levels
Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
Output Low Voltage (IOL = 8.0 mA)
Output High Voltage (IOH = –4.0 mA)
* VIL ≥ –1.5 V for t ≤ tKHKH/2.
** VIH ≤ VDD + 1.0 V (not to exceed 4.6 V) for t ≤ tKHKH/2.
VDD
VIH
VIL
Ilkg(I)
Ilkg(O)
IDDA–133
IDDA–100
IDDA–83
ISB1
VOL
VOH
Min
3.135
2.0
–0.5*
—
—
—
—
Max
Unit
3.465
V
VDD + 0.5**
V
0.8
V
±1.0
µA
±1.0
µA
400
mA
350
325
100
mA
—
0.4
V
2.4
VDD
V
CAPACITANCE (f = 1.0 MHz, TA = 0° to 70°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Address and Data Input Capacitance
Control Pin Input Capacitance
Output Capacitance
Symbol
Cin
Cin
Cout
Max
Unit
6
pF
6
pF
8
pF
MCM63D736
6
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