MRFG35002N6T1_08 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
14
V_DS = 6 Vdc, I_DQ = 75 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
12 _{ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_}
G_T
10
8
6
η_D
4
0
5
10
15
20
25
P_out, OUTPUT POWER (dBm)
Figure 3. Transducer Gain and Drain
Efficiency versus Output Power
−20
V_DS = 6 Vdc, I_DQ = 75 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
−30 ^{ΓS = 0.813é−115.4_, ΓL = 0.748é−147.8_}
IRL
−40
50
40
30
20
10
0
30
0
−5
−10
−50
−15
ACPR
−60
−20
0
6
12
18
24
30
P_out, OUTPUT POWER (dBm)
Figure 4. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE: All data is referenced to package lead interface. Γ_S and Γ_L are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
RF Device Data
Freescale Semiconductor
MRFG35002N6T1
5