MRF6S27050HSR3 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
19
24
18 η_D
23
17
22
G_ps
16
V_DD = 28 Vdc, P_out = 7 W (Avg.), I_DQ = 500 mA
21
Single−Carrier W−CDMA, 3.84 MHz Channel
15
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 20
−5
IRL
14
−40
−10
13 ^ACPR
−50
−15
12
−60
−20
ALT1
11
−70
−25
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ P_out = 7 Watts Avg.
19
34
η_D
18
33
17
G_ps
16
15
IRL
14
13 ^ACPR
32
V_DD = 28 Vdc, P_out = 14 W (Avg.)
31
I_DQ = 500 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
30
−5
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−30
−10
−40
−15
12
−50
−20
ALT1
11
−60
−25
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ P_out = 14 Watts Avg.
20
I_DQ = 1000 mA
19
18 _{750 mA}
17
500 mA
16
15
250 mA
14
125 mA
13
12
1
V_DD = 28 Vdc
f1 = 2598.75 MHz, f2 = 2601.25 MHz
Two−Tone Measurements
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−15
V_DD = 28 Vdc, f1 = 2598.75 MHz, f2 = 2601.25 MHz
−20 Two−Tone Measurements
−25
I_DQ = 125 mA
−30
−35 _{250 mA}
−40
750 mA
−45
−50
1000 mA
500 mA
−55
0.5 1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S27050HR3 MRF6S27050HSR3
5