|
MRF6P27160HR6_06 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |||
|
◁ |
TYPICAL CHARACTERISTICS
16
24
15.8
23
15.6
ηD 22
15.4
21
15.2 VDD = 28 Vdc, Pout = 35 W (Avg.),
15 IDQ = 1800 mA, NâCDMA ISâ95 Pilot,
Gps
Sync, Paging, Traffic Codes 8 Through 13
14.8
20
IRL â40
â10
â45
â11
14.6
ACPR
â50
â12
14.4
â55
â13
ALT1
14.2
â60
â14
14
â65
â15
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg.
15.2
15.1 Gps
15
14.9 ηD
14.8
35
VDD = 28 Vdc, Pout = 70 W (Avg.),
IDQ = 1800 mA, NâCDMA ISâ95 Pilot,
34
Sync, Paging, Traffic Codes 8 Through 13 33
32
31
14.7
30
14.6
14.5 ACPR
14.4
14.3
ALT1
IRL â30
â10
â35
â11
â40
â12
â45
â13
14.2
â50
â14
14.1
â55
â15
14
â60
â16
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg.
17
IDQ = 2700 mA
16
2250 mA
1800 mA
15
1350 mA
14
13 900 mA
12
0.1
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoâTone Measurements, 2.5 MHz Tone Spacing
1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
â20
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoâTone Measurements, 2.5 MHz Tone Spacing
â30
IDQ = 900 mA
â40
2700 mA
â50
2250 mA
1800 mA
â60
1350 mA
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
5
|
▷ |