MRF6P23190HR6 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
14.4
25
V_DD = 28 Vdc, P_out = 40 W (Avg.), I_DQ = 1900 mA
14.2 2−Carrier W−CDMA, 10 MHz Carrier Spacing
24
14 ^ηD
23
13.8
13.6 ^Gps
13.4 _IM3
13.2
13 ^ACPR
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IRL
22
− 36
− 13
− 38
− 15
− 16
− 40
− 18
− 42
− 19
12.8
− 44
− 21
2270 2290 2310 2330 2350 2370 2390 2410 2430
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ P_out = 40 Watts Avg.
14
35
V_DD = 28 Vdc, P_out = 80 W (Avg.), I_DQ = 1900 mA
13.8 2−Carrier W−CDMA, 10 MHz Carrier Spacing
34
13.6 ^ηD
32
13.4
13.2 G_ps
13 ^IM3
12.8
12.6 ^ACPR
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
IRL
31
− 26
− 12
− 28
− 13
− 15
− 30
− 16
− 32
− 18
12.4
− 34
− 19
2270 2290 2310 2330 2350 2370 2390 2410 2430
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ P_out = 80 Watts Avg.
16
I_DQ = 2850 mA
15
2375 mA
14 _{1900 mA}
13 _{1425 mA}
12 _{950 mA}
11
V_DD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
10
0.5 1
10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz
−20 ^{Two −Tone Measurements, 10 MHz Tone Spacing}
− 30
2850 mA
− 40
I_DQ = 950 mA
− 50
− 60
1425 mA
2375 mA
1900 mA
− 70
0.5 1
10
100
500
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6P23190HR6
5