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MRF19030LR3 Datasheet, PDF (5/8 Pages) Motorola, Inc – The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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TYPICAL CHARACTERISTICS
50
â10
IRL
40
â15
η
30 VDD = 26 Vdc
â20
IDQ = 300 mA, Pout = 30 W (PEP)
TwoâTone Measurement, 100 kHz Tone Spacing
20
â25
Gps
10
â30
IMD
0
â35
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
45
VDD = 26 Vdc
40 IDQ = 350 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
35 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
30
25 2.25 MHz
885 kHz
η
20 1.25 MHz
15
Gps
10
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8â13, SYNC:32
5
0
2
4
6
8
10
Pout, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
â20
â30
â40
â50
â60
â70
â80
â90
â100
12
â25
VDD = 26 Vdc, f = 1960 MHz
â30
TwoâTone Measurement,
100 kHz Tone Spacing
â35
200 mA
â40
300 mA
400 mA
â45
350 mA
â50
300 mA
â55
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
15
14 400 mA
350 mA
300 mA
13
300 mA
200 mA
12
VDD = 26 Vdc, f = 1960 MHz
TwoâTone Measurement, 100 kHz Tone Spacing
11
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
â20
VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz
â30 TwoâTone Measurement,
100 kHz Tone Spacing
â40
3rd Order
â50
5th Order
7th Order
â60
â70
â80
1.0
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
14
â22
f = 1960 MHz
IDQ = 300 mA, Pout = 30 W (PEP)
â24
TwoâTone Measurement, 100 kHz Tone Spacing
13.5
â26
Gps
â28
13
â30
IMD
â32
12.5
â34
â36
12
â38
20
22
24
26
28
30
32
34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
RF Device Data
Freescale Semiconductor
MRF19030LR3 MRF19030LSR3
5
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