MW7IC915NT1 Datasheet, PDF (4/17 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifier

Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ1 = 52 mA, I_DQ2 = 134 mA, 865 - 895 MHz Bandwidth
P_out @ 1 dB Compression Point, CW
(V_DD = 28 Vdc, I_DQ1 = 75 mA, I_DQ2 = 100 mA)
P1dB
—
15.5
—
W
IMD Symmetry @ 16 W PEP, P_out where IMD Third Order
Intermodulation ` 30 dBc
IMD_sym
MHz
—
45
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW_res
—
180
—
MHz
Quiescent Current Accuracy over Temperature ⁽¹⁾
Stage 1
ΔI_QT
—
0.10
—
%
with 2 kΩ Gate Feed Resistors ( - 30 to 85°C)
Stage 2
—
0.12
—
Gain Flatness in 30 MHz Bandwidth @ P_out = 1.6 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
G_F
—
0.1
—
dB
ΔG
—
0.041
—
dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
—
0.004
—
dBm/°C
Typical Performance — 700 MHz (In Freescale 700 MHz Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ1 = 50 mA, I_DQ2 = 144 mA, P_out =
1.6 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
G_ps
(dB)
PAE
ACPR
IRL
(%)
(dBc)
(dB)
728 MHz
748 MHz
768 MHz
37.8
17.2
- 49.5
- 23
37.8
17.3
- 50.5
- 22
37.7
17.3
- 51.4
- 22
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MW7IC915NT1
4
RF Device Data
Freescale Semiconductor