MRF21090R3_06 Datasheet, PDF (4/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL PERFORMANCE (IN FREESCALE TEST FIXTURE)
60
−5
50
IRL
−10
40
30
20
10
0
2080 2100
−15
η
V_DD = 28 Vdc
−20
P_out = 90 W (PEP)
I_DQ = 750 mA
Two−Tone Measurement
−25
G_ps
100 kHz Tone Spacing
−30
IMD
−35
2120 2140 2160 2180 2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
30
−20
V_DD = 28 Vdc
I_DQ = 1000 mA
25 ^{f = 2140 MHz}
−30
Channel Spacing (Channel Bandwidth):
4.096 MHz (5 MHz)
20
−40
ACPR
15
−50
G_ps
10
η
−60
5
−70
0
5.0
10
15
20
P_out, OUTPUT POWER (WATTS) AVG.
Figure 4. CDMA ACPR, Power Gain and Drain
Efficiency versus Output Power
−25
V_DD = 28 Vdc
f = 2140 MHz
−30 _{Two−Tone Measurement}
100 kHz Tone Spacing
−35
−40
500 mA
2000 mA
1500 mA
−45
800 mA
−50
1000 mA
−55
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
−20
V_DD = 28 Vdc
−30
I_DQ = 750 mA
f = 2140 MHz
Two−Tone Measurement
−40 100 kHz Tone Spacing
−50
3rd Order
5th Order
−60
7th Order
−70
−80
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
V_DD = 28 Vdc
f = 2140 MHz
14
2000 mA
Two−Tone Measurement
100 kHz Tone Spacing
1500 mA
13
12
1000 mA
800 mA
11
500 mA
10
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
MRF21090R3 MRF21090SR3
4
11.8
−22
11.6
11.4
11.2
G_ps
11.0
−24
P_out = 90 W (PEP)
I_DQ = 750 mA
−26
f = 2140 MHz
Two−Tone Measurement
100 kHz Tone Spacing ^−28
Fixture Tuned for 28 Volts
−30
10.8
10.6
20 22
IMD
24
26
28
30
32
V_DS, DRAIN VOLTAGE (VOLTS)
−32
−34
34
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
RF Device Data
Freescale Semiconductor