MRF18030ALR3 Datasheet, PDF (4/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16
0
15
G_ps @ 15 W
−5
14
G_ps @ 30 W
−10
13
−15
IRL @ 30 W
12
−20
11
10
1750
V_DD = 26 Vdc
I_DQ = 250 mA
T = 25_C
1800
1850
f, FREQUENCY (MHz)
IRL @ 15 W
−25
−30
1900
1950
Figure 3. Wideband Gain and IRL at 30 W and
15 W Output Power
40
35
P_in = 2 W
30
1W
25
V_DD = 26 Vdc
20
I_DQ = 250 mA
0.5 W _{T = 25_C}
15
10
0.25 W
5
0
1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 4. Output Power versus Frequency
16
15 ^{IDQ = 400 mA}
300 mA
14
200 mA
13
12 _{100 mA}
11
10
0.1
1
V_DD = 26 Vdc
f = 1840 MHz
T = 25_C
10
100
P_out, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
16
15
T = 25_C
14
55_C
13
85_C
12
11
10
V_DD = 26 Vdc
I_DQ = 250 mA
f = 1840 MHz
9
24 26 28 30 32 34 36 38 40 42 44 46 48
P_out, OUTPUT POWER (dBm)
Figure 6. Power Gain versus Output Power
15
14
13
30 V
28 V
12
26 V
11
10 ^{IDQ = 250 mA}
f = 1840 MHz
T = 25_C
9
0.1
1
24 V
V_DD = 22 Vdc
10
100
P_out, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Output Power
16
60
15
G_ps
50
14
40
13
30
V_DD = 26 Vdc
12 ^{IDQ = 250 mA}
20
f = 1840 MHz
η
11
10
10
0
0.1
1
10
100
P_out, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Efficiency versus
Output Power
MRF18030ALR3 MRF18030ALSR3
4
RF Device Data
Freescale Semiconductor