MCF51QM128_12 Datasheet, PDF (30/71 Pages) Freescale Semiconductor, Inc – MCF51QM128

Memories and memory interfaces
6.4.1.4 Reliability specifications
Table 20. NVM reliability specifications
Symbol Description
Min.
Program Flash
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
t_nvmretp100 Data retention after up to 100 cycles
n_nvmcycp Cycling endurance
5
10
15
10 K
Data Flash
t_nvmretd10k Data retention after up to 10 K cycles
5
t_nvmretd1k Data retention after up to 1 K cycles
10
t_nvmretd100 Data retention after up to 100 cycles
15
n_nvmcycd Cycling endurance
10 K
FlexRAM as EEPROM
t_nvmretee100 Data retention up to 100% of write endurance
t_nvmretee10 Data retention up to 10% of write endurance
t_nvmretee1 Data retention up to 1% of write endurance
Write endurance
n_nvmwree16
n_nvmwree128
n_nvmwree512
n_nvmwree4k
n_nvmwree8k
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
5
10
15
35 K
315 K
1.27 M
10 M
20 M
Typ.¹
50
100
100
35 K
50
100
100
35 K
50
100
100
175 K
1.6 M
6.4 M
50 M
100 M
Max.
Unit
Notes
—
years
2
—
years
2
—
years
2
—
cycles
3
—
years
2
—
years
2
—
years
2
—
cycles
3
—
years
2
—
years
2
—
years
2
4
—
writes
—
writes
—
writes
—
writes
—
writes
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology.
2. Data retention is based on T_javg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T_j ≤ 125°C.
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
MCF51QM128 Data Sheet, Rev. 6, 01/2012.
30
Freescale Semiconductor, Inc.