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MW7IC18100NR1 Datasheet, PDF (3/32 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 180 mA, IDQ2 = 1000 mA, 1930-1990 MHz Bandwidth
Gain Flatness in 60 MHz Bandwidth @ Pout = 100 W CW
GF
—
0.37
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 100 W CW
Φ
—
0.502
—
°
Average Group Delay @ Pout = 100 W CW, f = 1960 MHz
Delay
—
2.57
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 100 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
63.65
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.048
—
dB/°C
Output Power Variation over Temperature
( - 30°C to +85°C)
ΔP1dB
—
0.004
—
dBm/°C
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
3