MRF8S18260H Datasheet, PDF (3/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Typical Performances (In Freescale Test Fixture, 50 ohm system) V_DD = 30 Vdc, I_DQ = 1600 mA, 1805--1880 MHz Bandwidth
P_out @ 1 dB Compression Point, CW
P1dB
—
260
—
IMD Symmetry @ 100 W PEP, P_out where IMD Third Order
Intermodulation  30 dBc
IMD_sym
—
21
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW_res
—
64
—
Gain Flatness in 75 MHz Bandwidth @ P_out = 74 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
G_F
—
0.4
—
∆G
—
0.011
—
Output Power Variation over Temperature
(--30°C to +85°C) ⁽¹⁾
∆P1dB
—
0.01
—
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Unit
W
MHz
MHz
dB
dB/°C
dB/°C
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
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