MRF6V2150N Datasheet, PDF (3/8 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
27
80
26
70
G_ps
25
60
24
50
23
40
22
V_DD = 50 Vdc
30
η_D
21
I_DQ = 450 mA
f = 220 MHz
20
20
10
0
50
100
150
200
P_out, OUTPUT POWER (WATTS) CW
Figure 1. Power Gain and Drain Efficiency
versus CW Output Power
27
I_DQ = 495 mA
26 _{540 mA}
25
450 mA
24 ^{360 mA 405 mA}
23
22
V_DD = 50 Vdc
f = 220 MHz
21
20
0
50
100
150
200
P_out, OUTPUT POWER (WATTS) CW
Figure 2. Power Gain versus Output Power
− 20
− 25
− 30
IM3 −U
− 35
IM3 −L
V_DD = 50 Vdc, I_DQ = 450 mA
− 40
f1 = 220 MHz, f2 = 220.1 MHz
Two −Tone Measurements
− 45
0
20
40
60
80
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 3. Third Order Intermodulation
Distortion versus Output Power
55
85_C
− 30_C
50
25_C
45
40
V_DD = 50 Vdc
I_DQ = 450 mA
f = 220 MHz
35
10
15
20
25
30
35
P_in, INPUT POWER (dBm)
Figure 4. Output Power versus Input Power
over Temperature
RF Device Data
Freescale Semiconductor
MRF6V2150N MRF6V2150NB
3