MRF6S9130HR3 Datasheet, PDF(3/12 Page) Freescale Semiconductor, Inc

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MRF6S9130HR3 Datasheet, PDF (3/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 Î¿hm system) VDD = 28 Vdc, IDQ = 950 mA,

Pout = 56 W Avg., 921 MHz<Frequency<960 MHz

Power Gain

Gps

18.5

Drain Efficiency

Î·D

Error Vector Magnitude

EVM

1.5

Spectral Regrowth at 400 kHz Offset

SR1

- 63

Spectral Regrowth at 600 kHz Offset

SR2

- 75

Typical CW Performances (In Freescale GSM Test Fixture, 50 Î¿hm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 130 W,

921 MHz<Frequency<960 MHz

Power Gain

Gps

Drain Efficiency

Î·D

Input Return Loss

IRL

- 12

Pout @ 1 dB Compression Point, CW

(f = 940 MHz)

P1dB

135

Unit

% rms

dBc

RF Device Data

Freescale Semiconductor

MRF6S9130HR3 MRF6S9130HSR3

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