56F801 Datasheet, PDF (21/48 Pages) Motorola, Inc – 56F801 16-bit Hybrid Controller

Flash Memory Characteristics
Table 3-7 Flash Timing Parameters
Operating Conditions: V_SS = V_SSA = 0 V, V_DD = V_DDA = 3.0–3.6V, T_A = –40° to +85°C, C_L ≤ 50pF
Characteristic
Symbol
Min
Typ
Max
Unit
Figure
Program time
Tprog*
20
–
–
us
Figure 3-4
Erase time
Terase*
20
–
–
ms
Figure 3-5
Mass erase time
Tme*
100
–
–
ms
Figure 3-6
Endurance¹
E_CYC
10,000 20,000
–
cycles
Data Retention¹
D_RET
10
30
–
years
The following parameters should only be used in the Manual Word Programming Mode
PROG/ERASE to NVSTR set
Tnvs*
–
5
–
us
Figure 3-4,
up time
Figure 3-5,
Figure 3-6
NVSTR hold time
Tnvh*
–
5
–
us
Figure 3-4,
Figure 3-5
NVSTR hold time (mass erase) _Tnvh1*
–
100
–
us
Figure 3-6
NVSTR to program set up time
Tpgs*
–
10
–
us
Figure 3-4
Recovery time
Trcv*
–
1
–
us
Figure 3-4,
Figure 3-5,
Figure 3-6
Cumulative program
HV period²
Thv
–
3
–
ms
Figure 3-4
Program hold time³
Tpgh
–
–
–
Figure 3-4
Address/data set up time³
Tads
–
–
–
Figure 3-4
Address/data hold time³
Tadh
–
–
–
Figure 3-4
1. One cycle is equal to an erase program and read.
2. Thv is the cumulative high voltage programming time to the same row before next erase. The same address cannot be
programmed twice before next erase.
3. Parameters are guaranteed by design in smart programming mode and must be one cycle or greater.
*The Flash interface unit provides registers for the control of these parameters.
56F801 Technical Data, Rev. 16
Freescale Semiconductor
21