MW7IC2425NR1 Datasheet, PDF(2/21 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MW7IC2425NR1 Datasheet, PDF (2/21 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain - Source Voltage

Gate - Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature (1,2)

Input Power

Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture)

Characteristic

VDS

VGS

VDD

Tstg

Symbol

- 0.5, +65

- 0.5, +10

32, +0

- 65 to +150

150

225

Value (2,3)

Vdc

Â°C

dBm

Unit

Thermal Resistance, Junction to Case

RÎ¸JC

Â°C/W

(Case Temperature 80Â°C, Pout = 25 W CW)

Stage 1, 28 Vdc, IDQ1 = 55 mA

6.1

Stage 2, 28 Vdc, IDQ2 = 195 mA

1.2

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1B (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22 - A113, IPC/JEDEC J - STD - 020

260

Â°C

Table 5. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 - Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 1.5 Vdc, VDS = 0 Vdc)

IDSS

Î¼Adc

IDSS

Î¼Adc

IGSS

Î¼Adc

Stage 1 - On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 20 Î¼Adc)

VGS(th)

1.2

1.9

2.7

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, IDQ1 = 55 mA) (4)

VGS(Q)

2.7

Vdc

Fixture Gate Quiescent Voltage

(VDD = 28 Vdc, IDQ1 = 55 mAdc) (4,5)

VGG(Q)

10.3

11.2

12.6

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

4. Measured in Freescale Narrowband Test Fixture.

5. See Appendix A for functional test measurements and test fixture.

(continued)

MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1

RF Device Data

Freescale Semiconductor

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