MRFE6VP5600HR6_11 Datasheet, PDF (2/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
Drain--Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 100 mA)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_GSS
—
—
V_(BR)DSS
130
—
I_DSS
—
—
I_DSS
—
—
1
μAdc
—
Vdc
10
μAdc
20
μAdc
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 960 μAdc)
Gate Quiescent Voltage
(V_DD = 50 Vdc, I_D = 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 2 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
V_GS(th)
1.7
2.2
2.7
Vdc
V_GS(Q)
2.0
2.5
3.0
Vdc
V_DS(on)
—
0.26
—
Vdc
C_rss
—
1.60
—
pF
C_oss
—
129
—
pF
C_iss
—
342
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 100 mA, P_out = 600 W Peak (120 W Avg.), f = 230 MHz,
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
G_ps
23.5
25.0
26.5
dB
η_D
73.5
74.6
—
%
Input Return Loss
IRL
—
--18
--12
dB
1. Each side of device measured separately.
MRFE6VP5600HR6 MRFE6VP5600HSR6
2
RF Device Data
Freescale Semiconductor