MRF6V2300NBR5 Datasheet, PDF (2/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
Drain--Source Breakdown Voltage
(I_D = 150 mA, V_GS = 0 Vdc)
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
2.5
mA
I_DSS
—
—
50
μAdc
V_(BR)DSS
110
—
—
Vdc
I_GSS
—
—
10
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 800 μAdc)
Gate Quiescent Voltage
(V_DD = 50 Vdc, I_D = 900 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_GS(th)
1
1.63
3
Vdc
V_GS(Q)
1.5
2.6
3.5
Vdc
V_DS(on)
—
0.28
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_rss
—
2.88
—
pF
C_oss
—
120
—
pF
C_iss
—
268
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 900 mA, P_out = 300 W, f = 220 MHz, CW
Power Gain
G_ps
24
25.5
27
dB
Drain Efficiency
η_D
66
68
—
%
Input Return Loss
IRL
—
--16
--9
dB
Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) V_DD = 50 Vdc, I_DQ = 900 mA, P_out = 300 W CW
Power Gain
f = 27 MHz
f = 450 MHz
G_ps
—
31.4
—
dB
—
21.7
—
Drain Efficiency
f = 27 MHz
f = 450 MHz
η_D
—
61.5
—
%
—
59.1
—
Input Return Loss
f = 27 MHz
f = 450 MHz
IRL
—
--17.4
—
dB
—
--24.4
—
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V2300NR1 MRF6V2300NBR1
2
RF Device Data
Freescale Semiconductor