MRF6S21050LR3_08 Datasheet, PDF (2/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V_DS = 68 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate - Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
μAdc
I_DSS
—
—
1
μAdc
I_GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μAdc)
Gate Quiescent Voltage
(V_DD = 28 Vdc, I_D = 450 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1.1 Adc)
Dynamic Characteristics ⁽¹⁾
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
V_GS(th)
1
2
3
Vdc
V_GS(Q)
2
2.9
4
Vdc
V_DS(on)
—
0.21
0.3
Vdc
C_rss
—
0.75
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 450 mA, P_out = 11.5 W Avg., f = 2157 MHz, 2 - carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
15
16
18
dB
Drain Efficiency
η_D
26
27.7
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
Adjacent Channel Power Ratio
ACPR
—
- 40
- 38
dBc
Input Return Loss
IRL
—
- 15
-9
dB
1. Part is internally matched both on input and output.
MRF6S21050LR3 MRF6S21050LSR3
2
RF Device Data
Freescale Semiconductor