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MRF5S21100HR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – To be Used in class AB for PCN-PCS/cellularradio and WLL applications. | |||
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Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
â
â
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
â
â
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
â
â
0.5
μAdc
On Characteristics (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1050 mAdc)
VGS(Q)
â
3.8
â
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.5 Adc)
VDS(on)
â
0.24
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.5 Adc)
gfs
â
6
â
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
â
2.14
â
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
12.5
13.5
â
dB
Drain Efficiency
ηD
24
26
â
%
Intermodulation Distortion
IM3
â
- 37
- 35
dBc
Adjacent Channel Power Ratio
ACPR
â
- 40
- 38
dBc
Input Return Loss
IRL
â
- 16
-9
dB
1. Part is internally matched both on input and output.
MRF5S21100HR3 MRF5S21100HSR3
2
RF Device Data
Freescale Semiconductor
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