MRF5P21180HR6_08 Datasheet, PDF (2/10 Pages) –

Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 28 Vdc, V_GS = 0)
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_DSS
—
—
10
µAdc
I_DSS
—
—
1
µAdc
I_GSS
—
—
1
µAdc
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 200 µAdc)
V_GS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage ⁽³⁾
(V_DS = 28 Vdc, I_D = 1600 mAdc)
V_GS(Q)
—
3.6
—
Vdc
Drain--Source On--Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 2 Adc)
V_DS(on)
—
0.26
0.3
Vdc
Forward Transconductance ⁽¹⁾
(V_DS = 10 Vdc, I_D = 2 Adc)
g_fs
—
5
—
S
Dynamic Characteristics ^(1,2)
Reverse Transfer Capacitance
(V_DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
C_rss
—
1.7
—
pF
Functional Tests ⁽³⁾ (In Freescale Test Fixture, 50 ohm system) V_DD = 28 Vdc, I_DQ = 1600 mA, P_out = 38 W Avg., f = 2157.5 MHz,
2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
G_ps
12.5
14
—
dB
Drain Efficiency
η_D
23
25.5
—
%
Intermodulation Distortion
IM3
—
--37.5
--35
dBc
Adjacent Channel Power Ratio
ACPR
—
--41
--38
dBc
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
IRL
—
--14
--9
dB
MRF5P21180HR6
2
RF Device Data
Freescale Semiconductor