MRF1518NT1_06 Datasheet, PDF (2/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Zero Gate Voltage Drain Current
(V_DS = 40 Vdc, V_GS = 0 Vdc)
I_DSS
—
Gate - Source Leakage Current
(V_GS = 10 Vdc, V_DS = 0 Vdc)
I_GSS
—
On Characteristics
Gate Threshold Voltage
(V_DS = 12.5 Vdc, I_D = 100 μA)
V_GS(th)
1
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
V_DS(on)
—
Dynamic Characteristics
Input Capacitance
(V_DS = 12.5 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance
(V_DS = 12.5 Vdc, V_GS = 0, f = 1 MHz)
C_iss
—
C_oss
—
Reverse Transfer Capacitance
(V_DS = 12.5 Vdc, V_GS = 0, f = 1 MHz)
C_rss
—
Functional Tests (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V_DD = 12.5 Vdc, P_out = 8 Watts, I_DQ = 150 mA, f = 520 MHz)
Drain Efficiency
(V_DD = 12.5 Vdc, P_out = 8 Watts, I_DQ = 150 mA, f = 520 MHz)
G_ps
—
η
—
Typ
—
—
1.6
0.4
66
33
4.5
13.5
60
Max
Unit
1
μAdc
1
μAdc
2.1
Vdc
—
Vdc
—
pF
—
pF
—
pF
—
dB
—
%
MRF1518NT1
2
RF Device Data
Freescale Semiconductor