MRF1511T1 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(V_DS = 35 Vdc, V_GS = 0)
Gate - Source Leakage Current
(V_GS = 10 Vdc, V_DS = 0)
On Characteristics
Gate Threshold Voltage
(V_DS = 7.5 Vdc, I_D = 170 μA)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 1 Adc)
Dynamic Characteristics
Input Capacitance
(V_DS = 7.5 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance
(V_DS = 7.5 Vdc, V_GS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(V_DS = 7.5 Vdc, V_GS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V_DD = 7.5 Vdc, P_out = 8 Watts, I_DQ = 150 mA, f = 175 MHz)
Drain Efficiency
(V_DD = 7.5 Vdc, P_out = 8 Watts, I_DQ = 150 mA, f = 175 MHz)
I_DSS
—
I_GSS
—
V_GS(th)
1.0
V_DS(on)
—
C_iss
—
C_oss
—
C_rss
—
G_ps
10
η
50
—
—
1.6
0.4
100
53
8
11.5
55
1
μAdc
1
μAdc
2.1
Vdc
—
Vdc
—
pF
—
pF
—
pF
—
dB
—
%
MRF1511T1
2
RF Device Data
Freescale Semiconductor