MMG3005NT1_08 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

Table 4. Electrical Characteristics (V_DC = 5 Vdc, 2140 MHz, T_C = 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Small - Signal Gain (S21)
Input Return Loss (S11)
G_p
14
15
—
IRL
—
- 11
—
Output Return Loss (S22)
ORL
—
-7
—
Power Output @ 1dB Compression
P1dB
—
30
—
Third Order Output Intercept Point
IP3
—
47
—
Noise Figure
NF
—
5
—
Supply Current ⁽¹⁾
I_DC
420
480
520
Supply Voltage ⁽¹⁾
V_DC
—
5
—
1. For reliable operation, the junction temperature should not exceed 150°C.
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
MMG3005NT1
2
RF Device Data
Freescale Semiconductor