MMG3003NT1_08 Datasheet, PDF (2/18 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

Table 4. Electrical Characteristics (V_CC = 6.2 Vdc, 900 MHz, T_C = 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Small - Signal Gain (S21)
Input Return Loss (S11)
G_p
19.3
20
—
IRL
—
- 15
—
Output Return Loss (S22)
ORL
—
- 9.3
—
Power Output @ 1dB Compression
P1dB
—
24
—
Third Order Output Intercept Point
IP3
—
40.5
—
Noise Figure
NF
—
4
—
Supply Current ⁽¹⁾
I_CC
160
180
205
Supply Voltage ⁽¹⁾
V_CC
—
6.2
—
1. For reliable operation, the junction temperature should not exceed 150°C.
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
MMG3003NT1
2
RF Device Data
Freescale Semiconductor