|
MRF6V2300NR5 Datasheet, PDF (18/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs | |||
|
◁ |
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
⢠AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
⢠AN1955: Thermal Measurement Methodology of RF Power Amplifiers
⢠AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
⢠EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
⢠Electromigration MTTF Calculator
⢠RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the âPart Numberâ link. Go to the Software &
Tools tab on the partâs Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
4
5
Date
Feb. 2007
Feb. 2007
May 2007
Jan. 2008
Dec. 2008
Apr. 2010
Description
⢠Initial Release of Data Sheet
⢠Added Fig. 1, Pin Connections, p. 1
⢠Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1
⢠Added Max value to Power Gain, Table 5, Functional Tests, p. 2
⢠Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4,
C19, C5, C18, C9, C12, C14, and C23, p. 3
⢠Increased operating frequency to 600 MHz, p. 1
⢠Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
⢠Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
⢠Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3
⢠Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
⢠Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
⢠Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2
⢠Added Figs. 16 and 17, Test Circuit Component Layout -- 27 MHz and 450 MHz, and Tables 7 and 8, Test
Circuit Component Designations and Values -- 27 MHz and 450 MHz, p. 9, 10
⢠Added Fig. 18, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 11
⢠Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
âContinuous use at maximum temperature will affect MTTFâ footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
⢠Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 18
MRF6V2300NR1 MRF6V2300NBR1
18
RF Device Data
Freescale Semiconductor
|
▷ |