MCF51JM128 Datasheet, PDF (16/54 Pages) Freescale Semiconductor, Inc – Microcontroller

Preliminary Electrical Characteristics
2 _{Junction to Ambient Natural Convection}
3 _{1s - Single Layer Board, one signal layer}
4 _{2s2p - Four Layer Board, 2 signal and 2 power layers}
The average chip-junction temperature (T_J) in °C can be obtained from:
T_J = T_A + (P_D × θ_JA)
Eqn. 1
where:
T_A = Ambient temperature, °Cθ_JA = Package thermal resistance, junction-to-ambient, °C/WP_D = P_int + P_I/OP_int =
I_DD × V_DD, Watts — chip internal powerP_I/O = Power dissipation on input and output pins — user determined
For most applications, P_I/O << P_int and can be neglected. An approximate relationship between P_D and T_J (if P_I/O is neglected)
is:
Solving equations 1 and 2 for K gives:
P_D = K ÷ (T_J + 273°C)
Eqn. 2
K = P_D × (T_A + 273°C) + θ_JA × (P_D)²
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P_D (at equilibrium)
for a known T_A. Using this value of K, the values of P_D and T_J can be obtained by solving equations 1 and 2 iteratively for any
value of T_A.
2.4 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete DC parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
Table 8. ESD and Latch-up Test Conditions
Model
Human Body
Latch-up
Description
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Symbol Value Unit
R1
1500 Ω
C
100 pF
–
3
–2.5 V
7.5
V
MCF51JM128 ColdFire Microcontroller, Rev. 0
16
Freescale Semiconductor