MRF6V12500HR5 Datasheet, PDF (14/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transis

PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software
& Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF6V12500H and MRF6V12500HS parts will be available for 2 years after release of
MRF6V12500H and MRF6V12500HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF6V12500H and MRF6V12500HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
Date
Sept. 2009
Apr. 2010
Sept. 2010
June 2012
Description
• Initial Release of Data Sheet
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Added RF High Power Model availability to Product Software, p. 9
• Maximum Ratings table: corrected V_DSS from --0.5, +100 to --0.5, +110 Vdc, p. 2
• Added 960--1215 MHz Broadband application as follows:
-- Typical Performance, p. 1, 2
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8
-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9
-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9
-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10
• Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
• Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6, 9
• Fig. 6, Output Power versus Input Power: corrected P_out, Output Power unit of measure to watts, p. 5
• Fig. 9, Output Power versus Input Power: corrected P_out, Output Power unit of measure to watts, p. 6
• Fig. 11, MTTF versus Junction Temperature: MTTF end temperature on graph changed to match maximum
operating junction temperature, p. 6
MRF6V12500HR3 MRF6V12500HSR3
14
RF Device Data
Freescale Semiconductor, Inc.