MW7IC2725NR1_10 Datasheet, PDF (13/24 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifiers

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
50
P3dB = 45.73 dBm (36 W)
Ideal
48
46
P1dB = 44.61 dBm (29 W)
44
Actual
42
40
38
V_DD = 28 Vdc, I_DQ1 = 77 mA, I_DQ2 = 275 mA
36
Pulsed CW, 10 μsec(on), 10% Duty Cycle,
f = 2500 MHz
34
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P1dB
42.7 + j11.6
4.86 - j1.63
50
P3dB = 44.46 dBm (35 W)
48
46
P1dB = 45.42 dBm (28 W)
44
42
40
Ideal
Actual
38
36
V_DD = 28 Vdc, I_DQ1 = 77 mA, I_DQ2 = 275 mA
34
Pulsed CW, 10 μsec(on), 10% Duty Cycle,
f = 2700 MHz
32
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P1dB
39.5 - j8.7
3.53 - j1.66
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 2500 MHz
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 2700 MHz
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
13