MRF1518NT1_08 Datasheet, PDF (13/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

f = 470 MHz
Z_in
Z_OL*
400 ^{f = 470 MHz}
135
400
Z_OL*
f = 175 MHz
175
Z_in
f = 135 MHz
Z_o = 10 Ω
V_DD = 12.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
400 4.28 +j2.36 4.41 +j0.67
440 6.45 +j5.13 4.14 +j2.53
470 5.91 +j3.34 3.92 +j4.02
V_DD = 12.5 V, I_DQ = 150 mA, P_out = 8 W
f
Z_in
MHz
Ω
Z_OL*
Ω
135 18.31 - j0.76 8.97 +j2.62
155 17.72 +j1.85 9.69 +j2.81
175 18.06 +j5.23 7.94 +j1.14
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 47 pF capacitor in
series with gate. (See Figure 19).
Z_in = Complex conjugate of source
impedance with parallel 15 Ω
resistor and 43 pF capacitor in
series with gate. (See Figure 28).
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Z_OL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and η_D > 50 %.
Note: Z_OL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _in
Z _OL*
Figure 38. Series Equivalent Input and Output Impedance (continued)
RF Device Data
Freescale Semiconductor
MRF1518NT1
13