MW6IC2420NBR1_08 Datasheet, PDF (11/12 Pages) Freescale Semiconductor, Inc – RF LDMOS Integrated Power Amplifier

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Mar. 2007
Apr. 2008
Description
• Initial Release of Data Sheet
• Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1
• Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1,
Functional Block Diagram, p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 2
• Replaced Case Outline 1329 - 09, Issue L, with 1329 - 09, Issue M, p. 8 - 10. Added pin numbers 1 through
17.
RF Device Data
Freescale Semiconductor
MW6IC2420NBR1
11