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33937_09 Datasheet, PDF (11/48 Pages) Freescale Semiconductor, Inc – Three Phase Field Effect Transistor Pre-driver
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 8.0 V ≤ VPWR = VSUP ≤ 40 V, -40°C ≤ TA ≤ 135°C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
OVER-CURRENT COMPARATOR
Common Mode Input Range(22)
Input Offset Voltage
Over-current Comparator Threshold Hysteresis(21)
Output Voltage
High Level at IOH = -500 µA
Low Level at IOL = 500 µA
VCM
2.0
–
VDD-0.02
V
VOS_OC
-50
–
50
mV
VOC_HYST
50
300
mV
V
VOH
0.85 VDD
–
VDD
VOL
–
–
0.5
HOLD OFF CIRCUIT
Hold Off Current (At Each GATE Pin)
3.0 V < VSUP < 40 V(23)
IHOLD
10
–
300
µA
PHASE COMPARATOR
High Level Input Voltage Threshold
Low Level Input Voltage Threshold
High Level Output Voltage at IOH = -500 µA
Low Level Output Voltage at IOL = 500 µA
High Side Source Input Resistance(21), (26)
DESATURATION DETECTOR
Desaturation Detector Threshold(24)
CURRENT SENSE AMPLIFIER
VIH_TH
VIL_TH
VOH
VOL
RIN
0.5 VSUP
0.3 VSUP
0.85 VDD
–
–
VDES_TH
1.2
–
0.65 VSUP
V
–
0.45 VSUP
V
–
VDD
V
–
0.5
V
40
–
kΩ
1.4
1.6
V
Recommended External Series Resistor (See Figure 9)
Recommended External Feedback Resistor (See Figure 9)(27)
Limited by the Output Voltage Dynamic Range
Maximum Input Differential Voltage (See Figure 9)
VID = VAMP_P - VAMP_N
Input Common Mode Range(21), (25)
Input Offset Voltage
RS = 1.0 kΩ, VCM = 0.0 V
Input Offset Voltage Drift(21)
Input Bias Current
VCM = 2.0 V
RS
–
1.0
–
kΩ
RFB
kΩ
5.0
–
15
VID
mV
-800
–
+800
VCM
VOS
-0.5
–
3.0
V
mV
-15
–
+15
δVOS/δT
–
-10
–
µV/°C
Ib
nA
-200
–
+200
Notes
21. This parameter is a design characteristic, not production tested.
22. As long as one input is in the common mode range there is no phase inversion on the output.
23. The hold off circuit is designed to operate over the full operating range of VSUP. The specification indicates the conditions used in
production test. Hold off is activated at VTHRST or VTHVLS.
24. Desaturation is measured as the voltage drop below VSUP, thus the threshold is compared to the drain-source voltage of the external
High Side FET. See Figure 5.
25. As long as one input is within VCM the output is guaranteed to have the correct phase. Exceeding the common mode rails on one input
will not cause a phase inversion on the output.
26. Input resistance is impedance from High Side source and is referenced to VSS. Approximate tolerance is ±20%.
27. The current sense amplifier is unity gain stable with a phase margin of approximately 45°. See Figure 10.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33937
11